Rapid Thermal Annealing of Ion Implanted Semiconductors
作者： B. J. Sealy
DOI: 10.1007/978-94-009-2800-8_11
关键词:
摘要: A survey of the uses rapid thermal annealing to activate implanted ions in silicon and gallium arsenide is presented. The problems associated with formation shallow junctions diffusion atoms are discussed. achievements for activating implants reviewed recent work aimed at understanding mechanisms by which incorporated lattice summarised.
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