Conduction Band Edge Discontinuity of In0.52Ga0.48As/In0.52(Ga1-xAlx)0.48As(0=<x=<1) Heterostructures
作者： Yoshihiro Sugiyama , Tsuguo Inata , Toshio Fujii , Yoshiaki Nakata , Shunichi Muto
DOI: 10.1143/JJAP.25.L648
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摘要: In0.52Ga0.48As/In0.52(Ga1-xAlx)0.48As/In0.52Ga0.48As potential barrier structures (x=0.25, 0.5, 0.75, 1), lattice-matched to InP, were grown by MBE using a pulsed molecular beam method. The conduction band edge discontinuity, ΔEc(x) between In0.52Ga0.48As and In0.52(Ga1-xAlx)0.48As, was obtained for the first time measuring current-voltage characteristics through structure as function of temperature in range 77–300 K. It confirmed that discontinuity varies linearly with Al composition, x, (ΔEc(x)=0.53x(eV) 0x1) is proportional gap difference, ΔEg(x), (ΔEc(x)=0.72ΔEg(x)(eV) 0x1).
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ipap.jp参考文章(2)
Toshio Fujii, Yoshiaki Nakata, Shunichi Muto, Satoshi Hiyamizu, InGaAlAs /InGaAs and InAlAs/InGaAlAs Quantum-Well Structures Grown by MBE Using Pulsed Molecular Beam Method Japanese Journal of Applied Physics. ,vol. 25, pp. L598- L600 ,(1986) , 10.1143/JJAP.25.L598
Toshio Fujii, Yoshiaki Nakata, Yoshihiro Sugiyama, Satoshi Hiyamizu, MBE Growth of InGaAlAs Lattice-Matched to InP by Pulsed Molecular Beam Method Japanese Journal of Applied Physics. ,vol. 25, pp. L254- L256 ,(1986) , 10.1143/JJAP.25.L254