Growth of Lattice Defects in Silicon during Oxidation
作者： H. J. Queisser , P. G. G. Van Loon
DOI: 10.1063/1.1713179
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摘要:
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sci-hub.se 参考文章(3)
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W. C. Dash, Copper Precipitation on Dislocations in Silicon Journal of Applied Physics. ,vol. 27, pp. 1193- 1195 ,(1956) , 10.1063/1.1722229
Bruce E. Deal, The Oxidation of Silicon in Dry Oxygen, Wet Oxygen, and Steam Journal of The Electrochemical Society. ,vol. 110, pp. 527- 533 ,(1963) , 10.1149/1.2425807