Effect of Strain-Modulated Multiple Quantum Wells on Carrier Dynamics and Spectral Sensitivity of III-Nitride Photosensitive Devices
作者： N. Laxmi , S. Routray , K. P. Pradhan
DOI: 10.1109/JSEN.2020.2971005
关键词:
摘要: In III-Nitride planar photosensitive devices (PSDs), proper engineering in polarization charges (PCs) are required order to reduce detrimental effects on the devices. this work, piezo-phototronic of PSDs explored, giving more emphasis photovoltaic application. The GaN/In x Ga1– N multiple quantum wells solar cell with {000-1} or {0001} as one facets intensively studied through numerical simulations. Analysis PCs both simulation and theoretical model at different ‘In’ compositions considered carefully. It is observed that reversed polar facet good enough enhance carrier dynamics quasi neutral region compared normal facet. This study provides an innovative aspect implementation fundamental device physics respect recent growth techniques realize application towards applications. effect layer all crystallographic orientations also discussed. A conversion efficiency 21% 74% fill factor achieved from strain modulated four well based considering 10% content under sun AM1.5G illumination.
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