Ion-implanted p-n junction indium-phosphide impatt diodes

摘要: Implantation of beryllium ions into a uniformly doped n-type InP epitaxial layer grown by vapour-phase epitaxy has been utilised to create p+?n junction for flat-profile single-drift impatt diodes. An r.f. performance comparable gallium arsenide obtained. A c.w. output power 1.6 W with 11.1% conversion efficiency measured at 9.78 GHz and peak 6.1 13.7% 10.8 10% duty cycle. The f.m. noise the oscillators is results reported silicon.