Semiconductor element and display device using the same
作者： Satoshi Murakami , Masahiko Hayakawa , Shunpei Yamazaki
DOI:
关键词:
摘要: A semiconductor having an active layer; a gate insulating film in contact with the semiconductor; electrode opposite to layer through film; first nitride formed over photosensitive organic resin on second and wiring provided second, film. opening portion is film, inner wall surface of covered laminate including inside portion, connected portion.
google.co.uk 参考文章(281)
Nelson S. Saks, Method for fabricating MNOS structures utilizing hydrogen ion implantation navy. ,(1982)
Masashi Kitani, Katsunori Terada, Tetsuya Shimada, Hisanori Tsuda, Satoshi Itabashi, Photoelectric conversion apparatus with shock-absorbing layer ,(1991)
Yasunori Shimada, Seiichi Mitsui, Reflection type liquid crystal display and method of producing the same ,(1995)
James R. Pfiester, Thin-film transistor having an inlaid thin-film channel region ,(1993)
Michael P. Duane, Michael C. Smayling, Method of making insulated gate field effect transistor with a lightly doped drain using oxide sidewall spacer and double implantations ,(1982)
I-Chi Liao, Nitride capped MOSFET for integrated circuits ,(1993)
Shunpei Yamazaki, Yasuhiko Takemura, Method for fabricating MIS semiconductor device ,(1994)
Robert Hotto, Dc integrating display driver employing pixel status memories ,(1992)
Yasunobu Kosa, Shinji Shimizu, June Sugiura, Kazuhiro Komori, Forming memory transistors with varying gate oxide thicknesses ,(1986)