High-quality praseodymium gate dielectrics
作者： Leonard Forbes , Kie Y. Ahn
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摘要: A praseodymium (Pr) gate oxide and method of fabricating same that produces a high-quality ultra-thin equivalent thickness as compared to conventional SiO 2 oxides are provided. The Pr is thermodynamically stable so the reacts minimally with silicon substrate or other structures during any later high temperature processing stages. process shown performed at lower temperatures than prior art, which further inhibits reactions structures. Using thermal evaporation technique deposit layer be oxidized, underlying surface smoothness preserved, thus providing improved more consistent electrical properties in resulting oxide.
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