Molecular engineering versus energy level alignment: Interface formation between oligothiophene derivatives and a metal substrate studied with photoemission spectroscopy
作者： A. J. Mäkinen , I. G. Hill , M. Kinoshita , T. Noda , Y. Shirota
DOI: 10.1063/1.1464209
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摘要: Two series of thin films oligothiophene derivatives grown on Ag substrates have been studied with photoelectron spectroscopy. The oligothiophenes were end-capped either electron-deficient (dismesitylboryl) or electron-rich (diphenyltolylamine) moieties to create molecules electron-accepting -donating properties, respectively. position the highest occupied molecular orbital (HOMO) at metal/organic interface is found be strongly dependent effective π-conjugation length capped dimesitylboryl groups, whereas in diphenyltolylamine, HOMO independent length. difference observed characteristics attributed different make-up frontier orbitals two series. This will particularly affect overall energy barrier for charge injection conductor/organic a device structure, such as an organic light-emitting diode, utilizing investigated carrier and transport.
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