Gas-sensing properties of SnxWO3+x mixed oxide thick films

作者: J.L. Solis , V. Lantto

DOI: 10.1016/S0925-4005(98)00065-3

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摘要: Abstract Screen printing has been used to fabricate Sn x WO 3+ mixed oxide thick films on alumina substrates. The powders for the thick-film pastes were made by heating various mixtures of SnO and 3 powders, corresponding nominal formula with between 0.5 1.72, in an argon atmosphere at 600°C 15 h. α -SnWO 4 phase was result equimolar mixture powders. Tin appears valence state 2+ , but oxides Mossbauer spectroscopy revealed both 4+ states tin. In addition experiments, X-ray diffraction (and Raman spectroscopy) study structure films. electrical conductivity together gas-response properties studied different temperatures room temperature 500°C. H 2 S, CO, SO NO concentrations synthetic air as test gases measurements. Some very sensitive selective S had anomalous response NO.

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