Novel charge pump converter with Tunnel FET devices for ultra-low power energy harvesting sources

摘要: Compared to conventional technologies, the superior electrical characteristics of III–V Tunnel FET (TFET) devices can highly improve process energy harvesting conversion at ultra-low input voltage operation (sub-0.25V). In order extend voltage/power range in charge pump topologies with TFET devices, it is major importance reduce band-to-band tunneling current when transistor under reverse bias conditions. This paper proposes a new topology that attenuate losses, thus improving power efficiency (PCE) broader values and output loads. It shown by simulations compared gate cross-coupled considering an 640 mV, proposed reduces losses from 19 % 1 %, for 10 µA. For this case, PCE increased 63 83 %.