Quantum size microcrystals grown using organometallic vapor phase epitaxy

摘要: Needle‐shaped quantum size microcrystals as thin 10 nm have been selectively grown by employing reduced pressure organometallic vapor phase epitaxy using trimethylgallium and arsine source materials. The within a SiO2 window area their growth axes along the [111] direction. Transmission electron diffraction analysis shows that crystal structure of is consistent with zinc‐blende GaAs. mechanism for growing needle‐shaped crystals similar to vapor‐liquid‐solid (VLS) equilibrium model. From photoluminescence measurements at 4.2 K, it found show very distinct spectra free exciton neutral acceptor‐bound recombinations, meaning good quality.