Ultraspeed low-voltage drive avalanche multiplication type semiconductor photodetector
作者： Masayoshi Tsuji
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摘要: In an avalanche photodiode having a separated electron injection type light absorbing layer/multiplication layer structure, the multiplication comprises (1−x−y) Al x Ga y As with composition thereof being graded from InAlAs on side to InGaAs and preferably has thickness of not more than 0.1 μm. By virtue above construction, very low noise characteristics ultraspeed can be attained in photodetectors at 1 μm wavelength for long distance optional communications.
google.co.uk 参考文章(15)
Michael J. Robertson, Julie J. Rimington, Paul M. Rodgers, Guard ring structure with graded be implantation ,(1990)
Otfried Madelung, Semiconductors - Basic Data ,(2012)
Geoffrey A. Landis, Raj K. Jain, InP solar cell with window layer National Aeronautics and Space Administration Report. ,(1992)
Federico Capasso, Graded bandgap photodetector ,(1980)
J. C. Carrano, D. J. H. Lambert, C. J. Eiting, C. J. Collins, T. Li, S. Wang, B. Yang, A. L. Beck, R. D. Dupuis, J. C. Campbell, GaN avalanche photodiodes Applied Physics Letters. ,vol. 76, pp. 924- 926 ,(2000) , 10.1063/1.125631
Masayoshi Tsuji, Kikuo Makita, Isao Watanabe, Kenko Taguchi, InAlGaAs impact ionization rates in bulk, superlattice, and sawtooth band structures Applied Physics Letters. ,vol. 65, pp. 3248- 3250 ,(1994) , 10.1063/1.112427
I. Watanabe, S. Sugou, H. Ishikawa, T. Anan, K. Makita, M. Tsuji, K. Taguchi, High-speed and low-dark-current flip-chip InAlAs/InAlGaAs quaternary well superlattice APDs with 120 GHz gain-bandwidth product IEEE Photonics Technology Letters. ,vol. 5, pp. 675- 677 ,(1993) , 10.1109/68.219707
Y. Sugimoto, T. Torikai, K. Makita, H. Ishihara, K. Minemura, K. Taguchi, T. Iwakami, High-speed planar-structure Inp/InGaAsP/InGaAs avalanche photodiode grown by VPE Electronics Letters. ,vol. 20, pp. 653- 654 ,(1984) , 10.1049/EL:19840447
Toru Tatsumi, Mitsuhiro Sugiyama, Monocrystalline semiconductor photodetector ,(1998)
Kenko Taguchi, Low noise avalanche photodiode having an avalanche multiplication layer of InAlAs/InGaAlAs ,(1993)