Integrated microwave semiconductor device with active and passive components
作者： Henricus Godefridus Rafael Maas , Ronald Dekker , De Einden Wilhelmus Theodorus Antonius Johannes Van
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摘要: A semiconductor device for microwave frequencies with a substrate (1-2) which is provided at first side (3) element (4), passive (5), and pattern of conductive elements (6), while the opposed, second (7) metallization (8) connected to (4, 5, 6) present on through windows (9) formed in substrate. The consists silicon layer (1) insulating material (2), (4) being (1), that (2) remote from (1). may here have very small thickness of, example, 0.1 0.2 νm. In such thin bipolar field effect transistors capable processing signals can be formed. Since thin, influence conductivity small.
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