作者: Kwang-Soon Ahn , Todd Deutsch , Yanfa Yan , Chun-Sheng Jiang , Craig L. Perkins
DOI: 10.1063/1.2756517
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摘要: p-type ZnO thin films with significantly reduced band gaps were synthesized by heavy Cu incorporation at room temperature and followed postdeposition annealing 500°C in air for 2h. All the rf magnetron sputtering on F-doped tin oxide-coated glass. The conductivity was confirmed Mott-Schottky plots illuminated I-V analysis. Cu+1 acceptor states (at substitutional sites) their band-gap reduction demonstrated UV-visible absorption x-ray excited valence measurements.