作者: S. Tagmouti , A. Outzourhit , A. Oueriagli , M. Khaidar , M. Elyacoubi
DOI: 10.1016/S0927-0248(01)00038-1
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摘要: Abstract Poly(3-methylthiophene) (P3MT)-based Schottky barrier diodes were prepared and their capacitance conductance measured as a function of frequency. The loss tangent these structures shows maximum which depends on the temperature according to an Arrhenius law. An average activation energy 0.3 eV is deduced from position this maximum. A similar value was found dependence I – V characteristics diodes. In addition, short-circuit photocurrent versus photon reveals peak at 1.66 eV attributed anti-bonding level polaron.