Comparison of switching and conducting performance of SiC-JFET and SiC-BJT with a state of the art IGBT
作者： Friedrich W. Fuchs , W.-Toke Franke
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摘要: Silicon Carbide (SiC) power semiconductors being actually in development are promising devices for the future. To outline their characteristics switching and conducting performance of a SiC-JFET SiC-BJT investigated compared to state art Si-IGBT. The losses, times efforts driving circuits investigated. focus is put on influence junction temperature losses devices. Therefore, 1200 V / 6 A have been used. BJT JFET show some advantages concerning total range.
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