Single-Walled Carbon-Nanotubes-Based Organic Memory Structures

摘要: The electrical behaviour of organic memory structures, based on single-walled carbon-nanotubes (SWCNTs), metal–insulator–semiconductor (MIS) and thin film transistor (TFT) using poly(methyl methacrylate) (PMMA) as the gate dielectric, are reported. drain source electrodes were fabricated by evaporating 50 nm gold, electrode was made from nm-evaporated aluminium a clean glass substrate. Thin films SWCNTs, embedded within insulating layer, used floating gate. SWCNTs-based devices exhibited clear hysteresis in their characteristics (capacitance–voltage (C–V) for MIS well output transfer transistors). Both structures shown to produce reliable large windows virtue high capacity reduced charge leakage. characteristics, shifts threshold voltage flat-band shift attributed charging discharging SWCNTs Under an appropriate bias (1 s pulses), is charged discharged, resulting significant shifts. Pulses low 1 V resulted write erase states.