The preparation and characterization of strained-layer superlattices in the GaAs + GaP system

摘要: The technique of metal organic chemical vapor deposi-tion has been used to prepare strained-layer superlattices in the GaAs + GaP system. consist alternating layers and GaAsxP1−x for x = 0.2 1.0, which vary thickness from 30 400 A. were grown by decomposition trlmethylgallium various mixtures ASH3 PH3 H2 at 800δC. uniformity determined optical transmission electron microscopy x-ray diffraction. composition was A new analysis developed determine layer strain as well thick (∼ 300 A). Transmission yield direct evidence that can be remove misfit dislocations generated during epitaxial growth a GaAsxP1-x alloy on lattice mismatched substrate. These results are agreement with previous work Matthews Blakeslee. Optical absorption, photocurrent spectroscopy photoluminescence have deter-mine band gap energy energies other transitions. values excellent predicted tight binding effective mass calculations.