Schottky Barrier Height Quantification of Plasma Treated P(VDF-TRFE) Thin Films
作者： Michael Vecchio , Amira Barhoumi Meddeb , Zoubeida Ounaies , Michael T. Lanagan , Jeff Shallenberger
DOI: 10.1109/CEIDP.2018.8544868
关键词:
摘要: Angle-resolved XPS and ToF-SIMS are employed to determine the impact of O 2 /CF 4 plasma treatment on P(VDF-TrFE) surface chemistry. Results indicate that chemical modification by increases percentage F at film surface, with grafted species remaining within first 5-10nm film. Analysis current-voltage I(V) data reveals high field conduction is an interfacially dominated phenomenon in modified thin films. A parametric study Schottky emission theory indicates change barrier height relative both material permittivity Richardson constant. quantification estimates a lowering 0.041eV due treatment, further supporting P(VDF -TrFE) films, can be significantly influenced via modification.
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