Electron velocity overshoot at room and liquid nitrogen temperatures in silicon inversion layers
作者： G.G. Shahidi , D.A. Antoniadis , H.I. Smith
DOI: 10.1109/55.2051
关键词:
摘要: … This conclusion suggests that electron velocity overshoot … To infer this phenomenon, submicrometer channel length Si … channel Si MOSFET’s in which carrier velocity overshoot is …
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sci-hub.se 参考文章(10)
R. S. Huang, P. H. Ladbrooke, The physics of excess electron velocity in submicron‐channel FET’s Journal of Applied Physics. ,vol. 48, pp. 4791- 4798 ,(1977) , 10.1063/1.323496
P.I. Suciu, R.L. Johnston, Experimental derivation of the source and drain resistance of MOS transistors IEEE Transactions on Electron Devices. ,vol. 27, pp. 1846- 1848 ,(1980) , 10.1109/T-ED.1980.20116
S.Y. Chou, D.A. Antoniadis, Relationship between measured and intrinsic transconductances of FET's IEEE Transactions on Electron Devices. ,vol. 34, pp. 448- 450 ,(1987) , 10.1109/T-ED.1987.22942
S. Selberherr, A. Schutz, H.W. Potzl, MINIMOS—A two-dimensional MOS transistor analyzer IEEE Transactions on Electron Devices. ,vol. 27, pp. 1540- 1550 ,(1980) , 10.1109/T-ED.1980.20068
SY Chou, Henry I Smith, DA Antoniadis, Sub-100-nm channel-length transistors fabricated using x-ray lithography Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. ,vol. 4, pp. 253- 255 ,(1986) , 10.1116/1.583451
G. W. Taylor, Velocity-Saturated Characteristics of Short-Channel MOSFETs AT&T Bell Laboratories Technical Journal. ,vol. 63, pp. 1325- 1404 ,(1984) , 10.1002/J.1538-7305.1984.TB00039.X
J.G. Ruch, Electron dynamics in short channel field-effect transistors IEEE Transactions on Electron Devices. ,vol. 19, pp. 652- 654 ,(1972) , 10.1109/T-ED.1972.17468
T. Kobayashi, K. Saito, Two-dimensional analysis of velocity overshoot effects in ultrashort-channel Si MOSFET's IEEE Transactions on Electron Devices. ,vol. 32, pp. 788- 792 ,(1985) , 10.1109/T-ED.1985.22021
S.C. Sun, J.D. Plummer, Electron mobility in inversion and accumulation layers on thermally oxidized silicon surfaces IEEE Transactions on Electron Devices. ,vol. 27, pp. 1497- 1508 ,(1980) , 10.1109/T-ED.1980.20063
S.Y. Chou, D.A. Antoniadis, H.I. Smith, Observation of electron velocity overshoot in sub-100-nm-channel MOSFET's in Silicon IEEE Electron Device Letters. ,vol. 6, pp. 665- 667 ,(1985) , 10.1109/EDL.1985.26267