Momentum conservation in the luminescence of modulation-doped Ga x In1-x As-Al y In1-y As quantum wells
作者： R Rinaldi , R Cingolani , M Ferrara , Yong-Hang Zhang , K Ploog
DOI: 10.1007/BF02482402
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摘要: Thek-conserving selection rule in the electron-hole recombination is investigated by intensity-dependent photoluminescence measurements inn-type modulation-doped GaxIn1−xAs−AlyIn1−yAs single quantum wells intentionally doped with Be acceptors well centre. Thek-non-conserving process involves electrons momentum up to Fermi edge and holes localized on acceptors. The transition from a one-component electron plasma two-component studied comparing experimental results theoretical line shape models. density-dependent band gap renormalization determined for plasma. obtained are found agree recent calculations.
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