作者: Maxim Yaprintsev , Alexei Vasil’ev , Oleg Ivanov
DOI: 10.1016/J.JEURCERAMSOC.2018.12.041
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摘要: Abstract Elemental composition, crystal and grain structures, specific electrical resistivity, thermopower, thermal conductivity, thermoelectric figure-of-merit of grained Bi1.9Gd0.1Te3 compounds sintered at TS = 690, 720, 735, 750, 780 810 K have been studied. Strong TS – effect on the structure was found. Fine-grained samples with average size ˜500 nm were prepared 720 735 K, whereas coarse-grained above 1100 nm TS = 750, 810 K. Evaporation Te takes place high temperatures, which results in forming anti-site defects Bi Te-sites. Electrical properties fine-grained happened to be rather different. The highest value equal ˜ 0.55 observed for sample TS = 750 K. This temperature corresponds transition from samples.