作者: Masumi Nishimura , Yasushi Nanai , Takayuki Bohda , Tsuyoshi Okuno
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摘要: We report the fabrication of europium thiosilicate (Eu2SiS4) on a silicon substrate. Europium sulfide (EuS) is thermally evaporated It sealed in vacuum with sulfur and then heated at 650 °C. Eu2SiS4 shows intense yellow photoluminescence, its wavelength (peak 570 nm) width (60 are reproducible. This corresponds to 4f65d–4f7 transition Eu2+. The photoluminescence efficiency measured estimated be 0.5%.