Laser reactive ablation deposition of silicon carbide films
作者： G. Leggieri , A. Luches , M. Martino , A. Perrone , R. Alexandrescu
DOI: 10.1016/0169-4332(95)00568-4
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摘要: Abstract Silicon carbide films were deposited on Si wafers (at room temperature and 150°C) by XeCl laser (fluence 5 J/cm2, pulse duration 30 ns, repetition rate 10 Hz) ablation of in low pressure (0.25–6 mbar) CH4 atmosphere. The deposits characterized different diagnostic techniques (XRD, XPS, RBS, etc.). Polycrystalline stoichiometric silicon ∼ 1 μm thick obtained under specific conditions after 104 pulses.
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