摘要: Ion-implantation and ion-channeling measurements have been used to study deuterium (D) in silicon. The D was introduced at room temperature by implantation 13 keV into single-crystal Si. detected its depth profile measured the D(/sup 3/He, p)/sup 4/He nuclear reaction, simultaneously Si lattice signal obtained from /sup 3/He backscattering. Comparisons of observed channeling angular distributions with continuum-model calculated for , axial )110) planar directions indicate that is located predominantly a single interstitial site 1.6 A along direction atom antibonding direction. resulting structure compared other known impurity centers implications this are discussed.
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