作者: A. Mishchenko , J. Berashevich , K. Wolf , D. A. Tenne , A. Reznik
DOI: 10.1364/OME.5.000295
关键词:
摘要: Light-induced effects in a-GexSe100-x chalcogenide glasses, i.e., photobleaching (PB), photodarkening (PD), and photoinduced structural transformations, have been investigated as a function of composition across the glass-forming region by an optical two-laser-beam technique, Raman analysis, first-principles simulations. It was found that there is critical concentration Ge x≈30% corresponds to crossover from transient PB mixture PD metastable PB. At microscopic level, this change photoexcitation process. low-Ge ( 30%) favors breakage Ge-Ge bonds upon formation light-induced 3D nanostructures. The bond conversion process verified analysis.