Properties of CdTe/InSb heterostructures prepared by molecular beam epitaxy
作者： T. H. Myers , Yawcheng Lo , J. F. Schetzina , S. R. Jost
DOI: 10.1063/1.330400
关键词:
摘要: Properties of CdTe/InSb heterostructures grown on (111)B InSb substrates by molecular beam epitaxy are reported. X‐ray diffraction and uv reflectance measurements were used to judge the quality for layers under various conditions. Auger depth profile analysis revealed a sharp interfacial region less than 250 A depositions at 220 °C. Detailed capacitance‐voltage yielded interface‐state densities 1.4–2.8×1011 cm−2 eV−1 (near midgap) these preliminary samples, indicating that improved metal‐insulator‐semiconductor structures may be possible using this lattice‐matched heterojunction surface passivation scheme.
harvard.edu
scitation.org
aip.org
sci-hub.se 参考文章(8)
J. D. Langan, C. R. Viswanathan, Characterization of improved InSb interfaces Journal of Vacuum Science and Technology. ,vol. 16, pp. 1474- 1477 ,(1979) , 10.1116/1.570225
T. H. Myers, S. W. Edwards, J. F. Schetzina, Optical properties of polycrystalline CdTe films Journal of Applied Physics. ,vol. 52, pp. 4231- 4237 ,(1981) , 10.1063/1.329272
P. Goldfinger, M. Jeunehomme, Mass spectrometric and Knudsen-cell vaporization studies of group 2B-6B compounds Transactions of the Faraday Society. ,vol. 59, pp. 2851- 2867 ,(1963) , 10.1039/TF9635902851
R.F. Brebrick, A.J. Strauss, Partial pressures and Gibbs free energy of formation for congruently subliming CdTe(c) Journal of Physics and Chemistry of Solids. ,vol. 25, pp. 1441- 1445 ,(1964) , 10.1016/0022-3697(64)90059-9
R. Castagné, A. Vapaille, Description of the SiO2Si interface properties by means of very low frequency MOS capacitance measurements Surface Science. ,vol. 28, pp. 157- 193 ,(1971) , 10.1016/0039-6028(71)90092-6
Ching-Yeu Wei, K.L. Wang, E.A. Taft, J.M. Swab, M.D. Gibbons, W.E. Davern, D.M. Brown, Technology development for InSb infrared imagers IEEE Transactions on Electron Devices. ,vol. 27, pp. 170- 175 ,(1980) , 10.1109/T-ED.1980.19836
J. Kim, Interface Properties of InSb MIS Structure IEEE Transactions on Parts, Hybrids, and Packaging. ,vol. 10, pp. 200- 207 ,(1974) , 10.1109/TPHP.1974.1134859
C.C. Chang, W.C. Johnson, Distribution of flat-band voltages in laterally nonuniform MIS capacitors and application to a test for nonuniformities IEEE Transactions on Electron Devices. ,vol. 25, pp. 1368- 1373 ,(1978) , 10.1109/T-ED.1978.19357