Influence of extrinsic factors on accuracy of mobility extraction in graphene metal-oxide-semiconductor field effect transistors

摘要: Graphene has attracted attention because of its extraordinarily high mobility. However, procedures to extract mobility from graphene metal-oxide semiconductor transistors have not been systematically established the accuracy value is affected by many extrinsic parameters. In this work, influence parameters, such as contact resistance, transient charging effect, measurement temperature, and ambient on are examined in order provide a protocol capable accurately assessing metal-oxide-semiconductor field effect transistors. Using well controlled test protocol, found be temperature independent up 450 K.