作者: Kallol Mohanta , Amlan J. Pal
DOI: 10.1063/1.3068190
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摘要: We form junctions between two ZnO nanoparticles. Such are formed by electrostatic adsorption of different monolayers in sequence. While one the contains intrinsically n-type nanoparticles, concentration Al dopant other monolayer is varied. All show current rectification. In several control experiments, direction rectification a junction reverses when sequence components inversed. This rules out any effect interface or metal electrode observed study mechanism that occurs such narrow junction. From current-voltage characteristics, we evaluate ideality factor diodes and find recombination predominates these voltage range our studies. Capacitance-voltage measurements depletion layer has indeed