A new method to invert top-gate organic field-effect transistors for Kelvin probe investigations
作者： L. A. Kehrer , E. J. Feldmeier , C. Siol , D. Walker , C. Melzer
DOI: 10.1007/S00339-012-7426-0
关键词:
摘要: In this contribution, we present a technique which allows for the investigation of local channel potentials poly(3-hexylthiophene) (P3HT)-based top-gate field-effect transistor. Usually it is impossible to measure transistor with Kelvin probe force microscope (KPFM) due electrical shielding or weak capacitive coupling tip through thick substrate channel. However, by depositing entire device on water solvable polyvinyl alcohol layer, devices can be completely detached from substrate, creating free-standing functioning organic (OFET). After detaching, possible laminate inverted another substrate. This method grants access usually hidden OFET, and therefore KPFM measurements performed.
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