Effect of Post-Deposition Annealing Process on the Resistive Switching Behaviour of TiO2 Thin Films by Sol-Gel Method
作者： Nur Syahirah Kamarozaman , Mohd Firdaus Mohamed Soder , Mohamed Zahidi Musa , Raudah A. Bakar , Wan Fazlida Hanim Abdullah
DOI: 10.4028/WWW.SCIENTIFIC.NET/AMR.925.125
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摘要: The paper presents the memristive behaviour of spin-coated titania thin films on ITO substrate. sample was annealed in air ambient at different annealing temperature and duration 250 450 °C for 20 60 min. effect post-annealing process to physical thickness crystallinity towards switching studied. It found that increases as post increases. Sample min with thinner film showed better even though is still amorphous form. Thus, our work, we believed does not affect sample. reliability device performance studied by repeating measurement three times.
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