Semiconductor device for supplying output voltage according to high power supply voltage
作者： Tomohide Terashima
DOI:
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摘要: A semiconductor device includes a p type substrate, first n region formed at the channel DMOS transistor in region, second vertical pnp bipolar and region. The has drain for receiving high power supply voltage (Vdc) source supplying an output (Vout). base connected to gate of transistor, emitter collector ground.
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