Exceeding 400% tunnel magnetoresistance at room temperature in epitaxial Fe/MgO/Fe(001) spin-valve-type magnetic tunnel junctions
作者： Hiroaki Sukegawa , Kazuhiro Hono , Qingyi Xiang , Tadakatsu Ohkubo , Seiji Mitani
DOI: 10.1063/5.0037972
关键词:
摘要: Giant tunnel magnetoresistance (TMR) ratios of 417% at room temperature (RT) and 914% 3 K were demonstrated in epitaxial Fe/MgO/Fe(001) exchange-biased spin-valve magnetic junctions (MTJs) by tuning growth conditions for each layer, combining sputter deposition the Fe layers, electron-beam evaporation MgO barrier, barrier interface tuning. Clear TMR oscillation as a function thickness with large peak-to-valley difference ∼80% was observed when layers grown on highly (001)-oriented Cr buffer layer. Specific features MTJs are symmetric differential conductance (dI/dV) spectra bias polarity plateau-like deep local minima dI/dV (parallel configuration) |V| = 0.2–0.5 V. At 3 K, fine structures two dips emerge dI/dV, reflecting coherent tunneling through Fe/MgO/Fe. We also 496% ratio RT 2.24 nm-thick-CoFe insertion bottom-Fe/MgO interface.
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sci-hub.st 参考文章(43)
Guo-Xing Miao, Krishna B. Chetry, Arunava Gupta, William H. Butler, Koji Tsunekawa, David Djayaprawira, Gang Xiao, Inelastic tunneling spectroscopy of magnetic tunnel junctions based on CoFeB∕MgO∕CoFeB with Mg insertion layer Journal of Applied Physics. ,vol. 99, ,(2006) , 10.1063/1.2162047
G Autès, J Mathon, A Umerski, None, Oscillatory behavior of tunnel magnetoresistance in a magnetic tunnel junction with varying magnetic layer thickness Physical Review B. ,vol. 84, pp. 134404- ,(2011) , 10.1103/PHYSREVB.84.134404
Shinji Yuasa, Akio Fukushima, Hitoshi Kubota, Yoshishige Suzuki, Koji Ando, Giant tunneling magnetoresistance up to 410% at room temperature in fully epitaxial Co∕MgO∕Co magnetic tunnel junctions with bcc Co(001) electrodes Applied Physics Letters. ,vol. 89, pp. 042505- ,(2006) , 10.1063/1.2236268
D. C. Worledge, P. L. Trouilloud, Magnetoresistance measurement of unpatterned magnetic tunnel junction wafers by current-in-plane tunneling Applied Physics Letters. ,vol. 83, pp. 84- 86 ,(2003) , 10.1063/1.1590740
Hiroaki Sukegawa, Koichiro Inomata, Seiji Mitani, Post-oxidized Mg-Al-O(001) coherent tunneling barrier in a wide range of resistance-area products Applied Physics Letters. ,vol. 105, pp. 092403- ,(2014) , 10.1063/1.4895104
Christian Heiliger, Peter Zahn, Ingrid Mertig, Influence of interface oxidation on the TMR ratio of Fe/MgO/Fe tunnel junctions Journal of Magnetism and Magnetic Materials. ,vol. 316, pp. 478- 480 ,(2007) , 10.1016/J.JMMM.2007.03.144
S. Ikeda, J. Hayakawa, Y. Ashizawa, Y. M. Lee, K. Miura, H. Hasegawa, M. Tsunoda, F. Matsukura, H. Ohno, Tunnel magnetoresistance of 604% at 300K by suppression of Ta diffusion in CoFeB∕MgO∕CoFeB pseudo-spin-valves annealed at high temperature Applied Physics Letters. ,vol. 93, pp. 082508- ,(2008) , 10.1063/1.2976435
C. Tusche, H. L. Meyerheim, N. Jedrecy, G. Renaud, A. Ernst, J. Henk, P. Bruno, J. Kirschner, Oxygen-induced symmetrization and structural coherency in Fe/MgO/Fe(001) magnetic tunnel junctions. Physical Review Letters. ,vol. 95, pp. 176101- ,(2005) , 10.1103/PHYSREVLETT.95.176101
David D. Djayaprawira, Koji Tsunekawa, Motonobu Nagai, Hiroki Maehara, Shinji Yamagata, Naoki Watanabe, Shinji Yuasa, Yoshishige Suzuki, Koji Ando, 230% room temperature magnetoresistance in CoFeB/MgO/CoFeB magnetic tunnel junctions ieee international magnetics conference. ,vol. 86, pp. 092502- ,(2005) , 10.1063/1.1871344
Derek Waldron, Vladimir Timoshevskii, Yibin Hu, Ke Xia, Hong Guo, First principles modeling of tunnel magnetoresistance of Fe/MgO/Fe trilayers. Physical Review Letters. ,vol. 97, pp. 226802- ,(2006) , 10.1103/PHYSREVLETT.97.226802