Effect of overlayer–substrate interaction on the coalescence behaviors of in-plane graphene/hexagonal boron nitride heterostructures
作者： Wei Wei , Yi Cui , Jiaqi Pan , Jiaqi Pan , Zhongmiao Gong
DOI: 10.1016/J.CARBON.2021.01.149
关键词:
摘要: In-plane graphene/hexagonal boron nitride (h-BN) heterostructures show promising applications in novel two-dimensional electronic and optoelectronic devices. The quality of graphene/h-BN (G-BN) domain boundaries, which plays a critical role in device performances, depends on their coalescence. Here, the coalescing mechanism determined by the overlayer–substrate interaction and the growth dynamics during the heterostructure synthesis were studied by in situ surface imaging measurements. In-plane G-BN …
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