作者: J Yu , S Matsumoto
DOI: 10.1016/J.DIAMOND.2004.02.010
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摘要: Abstract High quality cubic boron nitride films were deposited at temperature as low 870 °C by r.f. bias assisted plasma jet chemical vapor deposition. The decrease of growth is achieved the application instead d.c. bias. Raman peaks observed for samples 1120 to °C. rate approximately 0.3 μm/min and change not much with changing temperature. At nearly phase pure was obtained.