A study of IGBT turn-off behavior and switching losses for zero-voltage and zero-current switching
作者： K. Chen , T.A. Stuart
关键词:
摘要: The switching losses of insulated gate bipolar transistors (IGBTs) with zero voltage and current are compared the IGBTs hard switching. turn-off behavior IGBT is studied in detail for both effect a reverse during also investigated >
sci-hub.se 参考文章(1)
R. Rangan, D.Y. Chen, Jian Yang, J. Lee, Application of insulated gate bipolar transistor to zero-current switching converters IEEE Transactions on Power Electronics. ,vol. 4, pp. 2- 7 ,(1989) , 10.1109/63.21867