作者: Zhipeng Wu , Jun Zhu , Xingpeng Liu
DOI: 10.1007/S10854-016-5731-7
关键词:
摘要: Lead hafnate titanate (PHT) thin film was deposited by pulse laser deposition, characterized for the usage as a ferroelectric capacitor in view of Ferroelectric Random Access Memory (FeRAM) devices, and compared with lead zirconate (PZT) reference, which fabricated same conditions. Results indicate that 126 nm-thickness PHT low temperature self-buffer layer has single (111)-orientation. The following electric measurements were performed to investigate possibility this use FeRAM applications contrast PZT reference. This sample demonstrates good property remanent polarization 51 μC/cm2. no obvious degradation been observed after 2 × 109 fatigue reversals, promising candidate applications.