Tunability of the piezoelectric fields in strained III-V semiconductors
作者： R. Garg , A. Hüe , V. Haxha , M. A. Migliorato , T. Hammerschmidt
DOI: 10.1063/1.3194779
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摘要: In this work we show that tetragonal strain can be used to create a sign reversal of the piezoelectric field in InAs/GaAs semiconductor heterostructures. The dependence internal displacement cation-anion pairs and bond polarity are taken into account, beyond linear model, within an ab initio scheme. reported tunability is concept exploited optoelectronic devices.
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