InAs/GaAs quantum dots radiative recombination from zero-dimensional states
作者： M Grundmann , NN Ledentsov , R Heitz , L Eckey , J Christen
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摘要: Nanometer-scale quantum dots are fabricated using the Stranski-Krastanov growth mode of InAs on GaAs(001). For an average coverage four monolayers, 10 11 cm -2 pyramidal-shaped (12±1 nm base along , 5±1 high) formed as observed in plane-view and cross-section transmission electron microscopy. The exhibit short-range order, aligning rows directions. three-dimensional confinement wave function results ultrasharp luminescence lines (full width at half maximum <0.15 meV) from individual revealed with highly spatially resolved cathodoluminescence. Even elevated temperatures extremely sharp observed, proving δ-like zero-dimensional electronic density states
sci-hub.se 参考文章(13)
D. Bimberg, T. Wolf, J. Böhrer, 4He and 3He Calorimetric Absorption Spectroscopy: Principles and Results on InGaAs/AlInAs Quantum Wells and Fe in InP and GaAs Springer US. pp. 577- 593 ,(1991) , 10.1007/978-1-4757-4446-0_21
J. M. Moison, F. Houzay, F. Barthe, L. Leprince, E. André, O. Vatel, Self‐organized growth of regular nanometer‐scale InAs dots on GaAs Applied Physics Letters. ,vol. 64, pp. 196- 198 ,(1994) , 10.1063/1.111502
J. -Y. Marzin, J. -M. Gérard, A. Izraël, D. Barrier, G. Bastard, Photoluminescence of single InAs quantum dots obtained by self-organized growth on GaAs. Physical Review Letters. ,vol. 73, pp. 716- 719 ,(1994) , 10.1103/PHYSREVLETT.73.716
E. Kapon, D. M. Hwang, R. Bhat, Stimulated emission in semiconductor quantum wire heterostructures. Physical Review Letters. ,vol. 63, pp. 430- 433 ,(1989) , 10.1103/PHYSREVLETT.63.430
D Leonard, S Fafard, K Pond, YH Zhang, JL Merz, PM Petroff, Structural and optical properties of self-assembled InGaAs quantum dots Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. ,vol. 12, pp. 2516- 2520 ,(1994) , 10.1116/1.587794
Jeff Drucker, Coherent islands and microstructural evolution. Physical Review B. ,vol. 48, pp. 18203- 18206 ,(1993) , 10.1103/PHYSREVB.48.18203
P. O. Hansson, M. Albrecht, W. Dorsch, H. P. Strunk, E. Bauser, Interfacial energies providing a driving force for Ge/Si heteroepitaxy. Physical Review Letters. ,vol. 73, pp. 444- 447 ,(1994) , 10.1103/PHYSREVLETT.73.444
Y. Arakawa, H. Sakaki, Multidimensional quantum well laser and temperature dependence of its threshold current Applied Physics Letters. ,vol. 40, pp. 939- 941 ,(1982) , 10.1063/1.92959
D. J. Eaglesham, M. Cerullo, Dislocation-free Stranski-Krastanow growth of Ge on Si(100). Physical Review Letters. ,vol. 64, pp. 1943- 1946 ,(1990) , 10.1103/PHYSREVLETT.64.1943
C. W. Snyder, B. G. Orr, D. Kessler, L. M. Sander, Effect of strain on surface morphology in highly strained InGaAs films. Physical Review Letters. ,vol. 66, pp. 3032- 3035 ,(1991) , 10.1103/PHYSREVLETT.66.3032