Electronic Structure and Luminescence Processes in In1−xGaxP Alloys
作者： A. Onton , M. R. Lorenz , W. Reuter
DOI: 10.1063/1.1660748
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摘要: The conduction‐band structure of In1−xGaxP has been studied by cathodoluminescence (CL) and photoluminescence (PL). An accurate determination the direct energy gap (± 10 meV) as a function alloy composition (Δx = ± 0.025) is achieved simultaneous electron probe microanalysis spectral measurements CL excited microprobe beam. Similar in InP, GaAs, GaAs1−xPx, well absorption edge temperature dependence PL spectrum, indicate that essentially free‐carrier recombination observed lightly n‐type at 300 °K. These results ``cross over'' between indirect minima occurs x 0.74 2.26 eV.
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