Anomalously high thermoelectric power factor in epitaxial ScN thin films
作者： Sit Kerdsongpanya , Ngo Van Nong , Nini Pryds , Agnė Žukauskaitė , Jens Jensen
DOI: 10.1063/1.3665945
关键词:
摘要: Thermoelectric properties of ScN thin films grown by reactive magnetron sputtering on Al2O3(0001) wafers are reported. X-ray diffraction and elastic recoil detection analyses show that the composition is close to stoichiometry with trace amounts (∼1 at. % in total) C, O, F. We found thin-film exhibits a rather low electrical resistivity ∼2.94 μΩm, while its Seebeck coefficient approximately ∼−86 μV/K at 800 K, yielding power factor ∼2.5 × 10−3 W/mK2. This value anomalously high for common transition-metal nitrides.
harvard.edu
core.ac.uk
osti.gov
scitation.org
aip.org
sci-hub.se 参考文章(19)
Walter R. L. Lambrecht, Electronic structure and optical spectra of the semimetal ScAs and of the indirect-band-gap semiconductors ScN and GdN Physical Review B. ,vol. 62, pp. 13538- 13545 ,(2000) , 10.1103/PHYSREVB.62.13538
G. Travaglini, F. Marabelli, R. Monnier, E. Kaldis, P. Wachter, Electronic structure of ScN Physical Review B. ,vol. 34, pp. 3876- 3882 ,(1986) , 10.1103/PHYSREVB.34.3876
Hamad A. Al-Brithen, Arthur R. Smith, Daniel Gall, Surface and bulk electronic structure of ScN ( 001 ) investigated by scanning tunneling microscopy/spectroscopy and optical absorption spectroscopy Physical Review B. ,vol. 70, pp. 045303- ,(2004) , 10.1103/PHYSREVB.70.045303
F. J. DiSalvo, Thermoelectric cooling and power generation Science. ,vol. 285, pp. 703- 706 ,(1999) , 10.1126/SCIENCE.285.5428.703
Vijay Rawat, Yee Kan Koh, David G. Cahill, Timothy D. Sands, Thermal conductivity of (Zr,W)N/ScN metal/semiconductor multilayers and superlattices Journal of Applied Physics. ,vol. 105, pp. 024909- ,(2009) , 10.1063/1.3065092
D. Gall, I. Petrov, N. Hellgren, L. Hultman, J. E. Sundgren, J. E. Greene, Growth of poly- and single-crystal ScN on MgO(001): Role of low-energy N2+ irradiation in determining texture, microstructure evolution, and mechanical properties Journal of Applied Physics. ,vol. 84, pp. 6034- 6041 ,(1998) , 10.1063/1.368913
D. Gall, M. Städele, K. Järrendahl, I. Petrov, P. Desjardins, R. T. Haasch, T.-Y. Lee, J. E. Greene, Electronic structure of ScN determined using optical spectroscopy, photoemission, andab initiocalculations Physical Review B. ,vol. 63, pp. 125119- ,(2001) , 10.1103/PHYSREVB.63.125119
John M. Gregoire, Steven D. Kirby, George E. Scopelianos, Felix H. Lee, R. Bruce van Dover, High mobility single crystalline ScN and single-orientation epitaxial YN on sapphire via magnetron sputtering Journal of Applied Physics. ,vol. 104, pp. 074913- ,(2008) , 10.1063/1.2996006
C. X. Quintela, F. Rivadulla, J. Rivas, Thermoelectric properties of stoichiometric and hole-doped CrN Applied Physics Letters. ,vol. 94, pp. 152103- ,(2009) , 10.1063/1.3120280
Hamad A.H. AL-Brithen, Eugen M. Trifan, David C. Ingram, Arthur R. Smith, Daniel Gall, Phase stability, nitrogen vacancies, growth mode, and surface structure of ScN(0 0 1) under Sc-rich conditions Journal of Crystal Growth. ,vol. 242, pp. 345- 354 ,(2002) , 10.1016/S0022-0248(02)01447-1