Nonlinearities in p-i-n microwave photodetectors
作者： K.J. Williams , R.D. Esman , M. Dagenais
DOI: 10.1109/50.476141
关键词:
摘要: The nonlinearities in p-i-n photodetectors have been measured and numerically modeled. Harmonic distortion measurements were made with two single-frequency offset-phased-locked Nd:YAG lasers which provide a source dynamic range greater than 130 dB 1 MHz-50 GHz frequency range. Carrier transport is analytically described by three coupled nonlinear differential equations, Poisson's equation the hole electron continuity equations. These equations are solved to investigate isolate various mechanisms. numerical solution incorporates diffusion since our treatment includes carrier generation highly doped p-region of device. This absorption carrier-dependent velocities associated perturbed electric field (due space-charge loading effects) shown dominate photodetector behavior. model was extended predict that maximum currents 100 mA should be possible 20 bandwidth devices before sharp increase output occurs. In addition, second harmonic improvements 40-60 may if can fabricated strictly-depleted absorbing regions.
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