A sideband-injection locked extended cavity diode laser for interrogating cold trapped Strontium ions
作者： R.B.M Clarke , E Riis , G.P Barwood , P Gill , G Huang
DOI: 10.1016/S0030-4018(98)00575-6
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摘要: Abstract A simple optical sideband injection locking technique is demonstrated to frequency offset-lock a 674 nm slave extended cavity diode laser single source. By injecting light from master into either of the modulated laser, it shown that carrier locked with relative linewidth much less than 10 Hz. The bandwidth investigated determine largest capture range. An observation 2 S 1/2 – D 5/2 transition in ion 88 Sr + was performed using this system, yielding ≈1 kHz Zeeman structure, limited by linewidth. National Physical Laboratory
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