作者: S. J. Bull , T. F. Page
DOI: 10.1007/BF01124847
关键词:
摘要: The effects of varying the substrate temperature on implantation-induced structures and surface mechanical properties single crystal sapphire MgO have been investigated for a range 300 keV implanted ions. As implantation is lowered, dose at which amorphization occurs reduced thus, same doses, more amorphous material produced lower temperatures. Quantitative modelling shows that activation energy annealing during very much than might be expected post-implantation thermal material. Also, as increases there small amount damage in damaged-but-crystalline Both microhardness stresses depend critically presence since this relatively soft can support only stresses. However, while hardness behaviour dominated by radiation hardening, substitutionality, ionic misfit charge state ions also found to contribute further solid solution component hardening ion implantation. These are observed dependent. Crazing layers has reappraised. It established formation configuration crazes sensitive function temperature, it now proposed form response generated result expansion mismatch between layer substrate.