Pentacene organic field-effect transistors with polymeric dielectric interfaces: Performance and stability
作者： Xiao-Hong Zhang , Shree Prakash Tiwari , Bernard Kippelen
DOI: 10.1016/J.ORGEL.2009.06.001
关键词:
摘要: Abstract Low-voltage pentacene organic field-effect transistors (OFETs) with different gate dielectric interfaces are studied and their performance in terms of electrical properties operational stability is compared. Overall high demonstrated at low voltage by using a 100 nm-thick high-κ layer aluminum oxide (Al2O3) fabricated atomic deposition (ALD) modified hydroxyl-free low-κ polymers like polystyrene (PS), divinyltetramethyldisiloxane-bis(benzocyclobutene) (BCB) (Cyclotene™, Dow Chemicals), as well the widely used octadecyl-trichlorosilane (OTS). Devices PS BCB surfaces exhibit almost similar mobilities, subthreshold voltages, on/off current ratios. The higher mobility can be correlated to better structural ordering films, force microscopy (AFM) images X-ray diffraction (XRD). devices show good under bias stress conditions (VGS = VDS = −10 V for 1 h), resulting negligible drop (∼2%) saturation (IDS) comparison that OTS (∼12%), very decay (∼30%) BCB.
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