作者: D.B. Clarke , I. Suzuki , A.T. Bell
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摘要: Abstract The adsorption of CO and CO2 on Cu/SiO2 have been investigated by infrared spectroscopy. adsorbs Cu with a heat 8.4 kcal/mol, whereas weakly both SiO2 6.9 kcal/mol. As much as 24% the adsorbed is associated Cu, rest silica support. On freshly reduced Cu/SiO2, exhibits an band 2103 cm−1 at 2340 when surfaces. A 2118 also observed during exposure. This feature attributable Cu+ formed via dissociation into COS OS. extent measured to be about 20%. During exposure coverage increases rapidly, goes through maximum, then decays. transient competition for sites. effects temperature, pressure, space velocity, catalyst preoxidation, H2 addition can explained proposed mechanism.