Study of surface reactions during plasma enhanced chemical vapor deposition of SiO2 from SiH4, O2, and Ar plasma

摘要: In situ attenuated total reflection Fourier transform infrared spectroscopy was employed in proposing possible surface reaction mechanisms during plasma enhanced chemical vapor deposition of SiO2 from a mixture SiH4, O2, and Ar helical resonator reactor. Infrared spectra taken the oxide revealed that is covered with OH when conducted low SiH4 to O2 ratio (≪1). Both associated hydroxyls (SiOHassoc) isolated (SiOHisol) were detected on growth. Two kinds attached Si exist surface: weakly bound thermally desorb at 250 °C strongly under ion bombardment. The thermal removal does not lead formation, but ion‐assisted by Ar+ bombardment results growth via 2SiOH(s)+Ar+→Si–O–Si(s)+H2O(g)+Ar+. Experiments undertaken delineate heterogeneous paths between...