Modulation doping in GexSi1−x/Si strained layer heterostructures
作者： R. People , J. C. Bean , D. V. Lang , A. M. Sergent , H. L. Störmer
DOI: 10.1063/1.95074
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摘要: We report the first observation of modulation doping effect in Si/Ge0.2Si0.8 heterojunctions grown by molecular beam epitaxy. Peak hole mobilities ∼3300 cm2 V−1 s−1 have been observed at 4.2 K. These values, although nonoptimum, are comparable to best reported values for holes Si/SiO2 inversion layers. Low temperature, angular dependent, Shubnikov–de Haas measurements demonstrated two‐dimensional nature gas and yield a surface carrier density 3.5×1011 cm−2. From temperature dependence amplitudes effective mass 0.30±0.02mo has derived. Identical on n‐type having same Ge content (x=0.2) failed show sustained enhancement mobility low temperatures, indicating that ΔEv≫ΔEc.
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