Growth of manganese oxide thin films by atomic layer deposition
作者： O. Nilsen , H. Fjellvåg , A. Kjekshus
DOI: 10.1016/S0040-6090(03)01101-5
关键词:
摘要: Thin films of manganese oxide are made by the ALD (atomic layer deposition) technique using Mn(thd)3 (Hthd=2,2,6,6-tetramethylheptan-3,5-dione) and ozone as precursors. Pulse parameters for ALD-type growth established such can be achieved at deposition temperatures between 138 210 °C. Films have been deposited on both soda-lime glass Si(100) single crystals. The electrical resistivities as-deposited grown measured to 0.3–3.2 Ω cm (linear four-point-probe measurements).
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