The electronic band structures of the wide band gap semiconductors GaN and A1N
作者： D. Jones , A.H. Lettington
DOI: 10.1016/0038-1098(72)90490-5
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摘要: Abstract A non-local model potential has been developed for nitrogen and used to calculate the energy band structures of GaN A1N. The resulting are found be in good agreement with optical data these materials.
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